* Bandwidth : 5.2-5.8 GHz
* Pulsed operating mode
* High power: > 50W
* High Efficiency: up to 45%
* DC bias: VDS =50V @ ID_Q =400mA
* MTTF > 106 .

in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external matching .

The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal resis.

CHZ015A-QEG

CHZ015AaQEG

CHZ180A-SEB

CHZ180AaSEB

CHZ8012-QJA

CHZ9012-QFA

CH-101

CH-130-4

CH-132

CH-134

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